PART |
Description |
Maker |
FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
IRFP443R IRFF430R IRF731R IRF732R IRFP442R IRFP342 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR Rugged Series Power MOSFETs - N-Channel TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.75A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.7A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.8A I(D) | TO-247 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 6.8AI(四)|47 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 5.4AI(四)|04AA TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 4A条(丁)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.25A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 450V五(巴西)直| 2.25AI(四)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.35A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 1.35AI(四)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-204AA
|
International Rectifier, Corp. Intersil, Corp. Infineon Technologies AG Fairchild Semiconductor, Corp.
|
IRFIZ34N-004 IRFIZ46N-002 IRFIZ46N-029 IRFIZ46N-02 |
19 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 31 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 13 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 28 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 2.1 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 21 A, 60 V, 0.042 ohm, N-CHANNE 28 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 4.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. JST Mfg. Co., Ltd. Vishay Intertechnology, Inc. Austin Semiconductor, Inc
|
IRFF431 2N6783 IRFF223 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.75A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.2A I(D) | TO-39 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-39 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 3A条(丁)| TO - 39封装
|
Fairchild Semiconductor, Corp.
|
OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五(巴西)直| 5.5AI(四)|计划生育 TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五(巴西)直| 8A条(丁)|计划生育
|
Mitsubishi Electric, Corp.
|
NDT014 NDT014J23Z |
N-Channel Enhancement Mode Field Effect Transistor.7A0V.2ΩN沟道增强型场效应管(漏电.7A, 漏源电压60V,导通电.2Ω 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation
|
IRFU3709 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 90A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 30V的五(巴西)直| 90A型(丁)|51AA HEXFET? Power MOSFET SMPS MOSFET
|
International Rectifier, Corp. IRF[International Rectifier]
|
SST5460 SST5462 SST5461 2N5462 2N5460 2N5461 |
P-CHANNEL JFETS MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.2A; Current, Idm pulse:30A; Power, Pd:1.5W; Resistance, Rds on:0.024R; SMD:1; Charge, gate
|
VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|
FDP7030BLSS62Z FDB7030BLS |
56 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 30V的五(巴西)直|6A条(丁)|63AB TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 56A I(D) | TO-220AB
|
Fairchild Semiconductor, Corp. ITT, Corp. FAIRCHILD SEMICONDUCTOR CORP
|
STD1NA60 3633 STD1NA60-1 |
From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1.6A I(D) | TO-251 N-CHANNEL POWER MOSFET
|
http:// STMicroelectronics ST Microelectronics
|
2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose N-Channel JFETs MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
|
Vishay Siliconix Vishay Intertechnology,Inc.
|
|